New Module Technology
New Module Technology
The rapid commercialisation of TOPCon, heterojunction (HJT), perovskite, and tandem cell technologies is changing the field testing landscape in ways that existing IEC standards and conventional instruments are not fully equipped to address. Higher open-circuit voltages, different temperature coefficients, and unique degradation signatures all require updated measurement approaches. This section tracks the testing implications of emerging module technologies and provides practical guidance for technicians and engineers working with next-generation products.
TOPCon and HJT modules have higher open-circuit voltages per cell and lower temperature coefficients — particularly for Voc. HJT modules are especially sensitive to temperature during IV curve tracing because their very low Voc temperature coefficient (approximately −0.25%/°C versus −0.30% for PERC) means small temperature measurement errors translate to proportionally larger STC correction errors. Both also produce higher operating currents, increasing inrush current concerns at connection.
Check both the voltage rating and the inrush current protection rating. Many legacy IV tracers are rated to 1000V DC and cannot be used on 1500V strings at all. For those rated to 1500V, confirm whether the instrument has enhanced inrush current protection — HJT and TOPCon strings produce higher surge currents at connection than PERC strings of equivalent power. Using an instrument without appropriate protection risks damage to both the meter and its leads.
The IEC 62446-1 Riso test voltage requirements are determined by system voltage, not module technology. A 1500V TOPCon string requires the same minimum Riso test voltage as a 1500V PERC string — 500V minimum per standard, with 1000V being common practice for better fault sensitivity. What changes is that TOPCon modules may exhibit slightly different insulation characteristics at elevated temperatures due to their tunnel oxide passivation layer — worth noting when interpreting borderline readings.
PERC modules typically experience 1–2% LID in the first hours of light exposure due to boron-oxygen complex formation in p-type silicon. TOPCon modules use n-type silicon, which is not subject to classical boron-oxygen LID. HJT modules also use n-type silicon and show minimal LID. Both technologies may still exhibit light and elevated temperature induced degradation (LeTID) under specific conditions, but the magnitude and timescale differ from PERC — commissioning baselines should be established after initial light soaking per manufacturer guidance.
Yes. IEC TS 60904-1-2 governs IV measurement of bifacial devices including TOPCon and HJT, defining bifaciality coefficients and measurement conditions. IEC 60891:2022 Method 4 is the current recommended STC correction procedure for bifacial modules. IEC 62446-1 covers commissioning test requirements applicable to all c-Si module types including these technologies. Always use Geff rather than front-side irradiance alone when correcting measurements on bifacial TOPCon or HJT strings.